IWJT2008 May 15 - 16, 2008 Shanghai, China

8th International Workshop on Junction Technology
Hotel Equatorial


 

IWJT-2008 Organizations

 

General Co-Chairs

B. Z. Li

Fudan University

China

 

B. Mizuno

UJT Lab

Japan

 

T. Skotnicki

ST Microelectronics

France

  

Advisory Committee Co-Chairs

H. Iwai

Tokyo Inst. Technol.

Japan

 

S. C. Zou

Chinese Academy of Sciences

China

 

 

 

 

Members

L. J.  Chen

National Tsing Hua University,

Taiwan, China

 

 

 

 

Executive Committee Co-Chairs

X. P. Qu

Fudan University

China

 

M. Q. Zhou

Chinese Institute of Electronics

China

 

K. Tsutsui

Tokyo Inst. Technol.

Japan

 

P. K. Chu

Hong Kong City Univ.

China

 

 

 

 

Members

K. Ohuchi

Toshiba Corporation

Japan

 

S. Qin

Micron Technologies

USA

 

M. Tanjyo

Nissin Ion Equipment

Japan

 

J. O. Borland

J.O.B. Technologies

USA

 

Y.    Erokhin

Varian

USA

 

F. Hong

Chartered

Singapore

 

M. Xi

Applied Materials (Xi'an)

China

  S. M. Chen Shanghai IC R&D Center China
  H. Fang PDF Solutions, Inc.(Shanghai) China
  Z. S. Han IME, CAS China
  J. He NSFC China
  H. Ito Varian Japan

 

 

 

 

Program Committee Co-Chairs

Y. L. Jiang

Fudan University

China

 

K. Suguro

Toshiba

Japan

 

Q. Y. Han

Hans Consulting International

USA

 

 

 

 

Members

H. H. Tseng

SMATECH

USA

 

L. K. Nanver

Delft University of Technology

Netherlands

 

W. J. Taylor

Freescale

USA

 

G. Fuse

SEN

Japan

 

S. Deleonibus

Leti

France

 

R. Huang

Peking University

China

 

C. L. Lin

Shanghai Institute of Microsystem and Information Technology, CAS

China

 

H. M. Wu

SMIC

China

 

L. W. Wang

East China Normal University

China

  M. Hane NEC Japan
  H. D. Lee Chungnam National University Korea
  S. Shishiguchi NEC Japan
  J. Matsuo Kyoto University Japan
  M. Park Samsung Korea
  D. Mangelinck Universit└ Paul C└zanne France

 

 

 

 

Publication Chair

Y. L. Jiang

Fudan University

China