IWJT2008 May 15 - 16, 2008 Shanghai, China

8^th International Workshop on Junction Technology
Hotel Equatorial

Workshop Scope (Papers are solicited in, but not limited to the following areas)

• Doping Technology --- Ion implantation, plasma doping, gas and solid doping

• Annealing Technology --- Rapid thermal process, laser annealing, flash annealing, SPE, lattice damage and defects

• Junction Technology for Novel CMOS Device Structures --- Junction for SOI, strained Si, SiGe, Ge, and Schottky barrier S/D MOSFET

• Silicides and Contact Technology for CMOS --- Silicide materials and salicide technology, elevated S/D, low barrier contact, surface pre-treatment

• Junction and Contact Technologies for Compound Semiconductors and Quantum Devices --- Schottky and ohmic contacts to wide bandgap compound semiconductors, junction and contact technologies for carbon nanotube and other nano-, quantum devices, hetero-junction devices

• Characterization for Shallow Junction (1D, 2D) --- Physical and electrical characterization of ultra-shallow junction formation, dopant incorporation/activation, dopant profiling/mapping, novel characterization techniques

• Modeling and Simulation --- Modeling and simulation of ultra-shallow junction formation, modeling of novel junction-structure CMOS devices and non-Si based devices

• Equipment, Materials and Substrates for Junction Technology